CS55N10A8-G mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
l Halogen Free
Appl.
The
package form is TO-220, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdso.
CS55N10 A8-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited curre.
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